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| polyfet rf devices LK722 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. "Polyfet"TM process SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 45.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 290 Watts Junction to Case Thermal Resistance o 0.50 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 36 V Drain to Source Voltage 36 V Gate to Source Voltage 20 V 29.0 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 11 55 TYP 45.0 WATTS OUTPUT ) MAX UNITS TEST CONDITIONS dB % 10:1 Relative Idq = 0.80 A, Vds = Idq = 0.80 A, Vds = 12.5 V, F = 500 MHz 12.5 V, F = 500 MHz 500 MHz VSWR Idq = 0.80 A, Vds = 12.5 V, F = ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 2 3.4 0.30 26.00 100.0 4.0 80.0 MIN 36 4.0 1 5 TYP MAX UNITS TEST CONDITIONS V mA uA V Mho Ohm Amp pF pF pF Ids = 0.40 mA, Vgs = 0V Vds = 12.5 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.40 A, Vgs = Vds Vds = 10V, Vgs = 5V 12.00 A Vgs = 20V, Ids = Vgs = 20V, Vds = 10V Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com LK722 POUT VS PIN GRAPH L K 7 2 2 P in vs P o u t F re q = 5 0 0 M H z , V d s= 1 2 .5 V d c, I d q = .4 A 60 50 P out 40 30 20 10 0 0 1 2 3 4 5 P in in w a tts 6 7 8 E ffic ienc y @ P 1dB = 60% 12.00 11.00 14.00 13.00 CAPACITANCE VS VOLTAGE L1C 2DIE CAPACITANCE 1000 Coss 100 Ciss G ain 10 10.00 Crss 9.00 1 8.00 0 5 10 15 20 25 30 VDS IN VOLTS IV CURVE L1C 2 DIE IV 30 ID & GM VS VGS 100 L1C 2 DIE ID, GM vs VG 25 I 10 20 ID IN AMPS 15 10 GM 1 5 0 0 2 4 6 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20 0.1 vg=10v vg=12v vg=2v Vg=4v 0 2 4 Vgs in Volts 6 8 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com |
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